 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ADVANCED LINEAR DEVICES, INC. ALD4211/ALD4212 ALD4213 CMOS LOW VOLTAGE HIGH SPEED QUAD PRECISION ANALOG SWITCHES GENERAL DESCRIPTION The ALD4211/ALD4212/ALD4213 are quad SPST CMOS analog switches specifically designed for low voltage, high speed applications where 0.2pC charge injection, 200pf sampling capacitor, and picoamp leakage current are important analog switch operating characteristics. These analog switches feature fast switching, low on-resistance and micropower consumption. TheALD4211/4212/4213 are designed for precision applications such as charge amplifiers, sample and hold amplifiers, data converter switches, and programmable gain amplifiers. These switches are also excellent for low voltage micropower general purpose switching applications. APPLICATIONS INFORMATION The ALD4211/4212/4213 operate with a standard single power supply from +3V to +12Volts. Functionality extends down to a +2 volt power supply making it suitable for lithium battery or rechargeable battery operated systems where power, efficiency, and performance are important design considerations. Break-before-make switching is guaranteed with single supply operation. The ALD4211/4212/4213 may also be used with dual power supplies from 1.5 to 6 volts. With special charge balancing and charge cancellation circuitry on chip the ALD4211/ALD4212/ALD4213 were developed for ultra low charge injection applications. Using a 200pF sampling capacitor, very fast precise signal acquisition may be achieved. With ultra low quiescent current, these switches interface directly to CMOS logic levels from microprocessor or logic circuits. On the board level, low charge injection and fast operation may be achieved by using short leads, minimizing input and output capacitances, and by adequate bypass capacitors placed on the board at the supply nodes. For more information, see Application Note AN4200. The ALD4211/ALD4212/ALD4213 are manufactured with Advanced Linear Devices enhanced ACMOS silicon gate CMOS process. They are designed also as linear cell elements in Advanced Linear Devices' "Function-Specific" ASIC. ORDERING INFORMATION Operating Temperature Range -55C to +125C -40C to +85C -40C to +85C 16-Pin CERDIP Package ALD4211 DC ALD4212 DC ALD4213 DC 16-Pin Plastic Dip Package ALD4211 PC ALD4212 PC ALD4213 PC 16-Pin SOIC Package ALD4211 SC ALD4212 SC ALD4213 SC FEATURES * * * * * * * * * 3V, 5V and 5V supply operation 0.2pC charge injection 200pF sampling capacitor pA leakage current 0.1W power dissipation High precision Rail to rail signal range Low On-resistance Break-before-make switching BENEFITS * * * * * * Five times faster signal capture Low switching transients Low signal loss Essentially no DC power consumption Full analog signal range from rail to rail Flexible power supply range for battery operated systems APPLICATIONS * * * * * * * * * * * Fast sample and hold Computer peripherals PCMCIA Low level signal conditioning circuits Portable battery operated systems Analog signal multiplexer Programmable gain amplifiers Switched capacitor circuits Micropower based systems Video/audio switches Feedback control systems PIN CONFIGURATION/ BLOCK DIAGRAM IN1 COM1 OUT1 VGND OUT4 COM4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN2 COM2 OUT2 V+ NC OUT3 COM3 IN3 LOGIC TABLE Input Logic ALD4211 ALD4212 0 1 On Off Off On Off On Switch State ALD4213 Switch 1 / Switch 4 Switch 2 / Switch 3 IN4 DC, PC, SC PACKAGE On Off * Contact factory for industrial temperature range. (c) 2005.1 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VGND Terminal voltage range (any terminal) Note 1 Power dissipation Operating temperature range PC, SC package DC package Storage temperature range Lead temperature, 10 seconds DC current (any terminal) -0.3V to +13.2V -0.3V to +13.2V (V- -0.3)V to (V+ +0.3)V 600 mW -40C to +85C -55C to +125C -65C to +150C +260C 10mA POWER SUPPLY RANGE 4211/4212/4213 (PC,SC) Parameter Supply Voltage Symbol VSUPPLY Min 1.5 3.0 Typ Max 6.0 12.0 4211/4212/4213 (DC) Min 1.5 3.0 Typ Max 6.0 12.0 Unit V V Dual Supply Single Supply DC ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V, V- = -5.0V GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) Parameter Analog Signal Range On - Resistance Symbol VA RON Min -5.0 90 120 Typ Max 5.0 135 190 4211/4212/4213 (DC) Min -5.0 90 140 Change of On-Resistance from -V S to +VS Change of On-Resistance with Temperature Typ Max 5.0 135 210 Unit V Test Conditions VA = 0V IA = 1mA -40C to +85C -55C to +125C RON RON/T 16 16 % 0.43 0.43 %/C RON Match between Switches Off Com Leakage Current I COML 2 2 % 50 100 500 50 100 4000 pA pA pA pA pA pA pA pA pA V COM = 4.0V,VOUT = -/+4.0V -40C to +85C -55C to +125C V OUT = 4.0V, VCOM = -/+4.0V Off Out Leakage Current I OUTL 50 100 500 50 100 4000 -40C to +85C -55C to +125C On Channel Leakage Current I D(ON) 50 100 500 50 100 4000 -40C to +85C -55C to +125C Logic "1" Input High Voltage Input Low Voltage Input High or Input Low Current Supply Current VIH VIL IH I IL I SUPPLY 4.0 0.8 4.0 0.8 V Logic "0" 10 0.01 1 0.01 10 1 nA A ALD4211/ALD4212 ALD4213 Advanced Linear Devices 2 AC ELECTRICAL CHARACTERISTICS T A = 25C V+ = +5.0V, V- = -5.0V, GND = 0.0V unless otherwise specified Parameter Turn On Delay time Turn Off Delay time Charge Injection Off Isolation Crosstalk Total Harmonic Distortion Com/Out Off Capacitance Channel On Capacitance Pin to Pin Capacitance THD Symbol tON tOFF QINJ 4211/4212/4213(PC) 4211/4212/4213(DC) 4211/4212/4213(SC) Min Typ Max Min Typ Max Min Typ Max 60 130 60 130 60 130 Unit ns Test Conditions (Note 2) 60 0.2 75 90 0.05 0.01 130 1.0 60 0.2 75 90 0.05 0.01 130 1.0 60 0.2 75 90 0.05 0.01 130 1.0 ns pC dB dB % (Note 2) (Note 3) (Note 4) At f = 100KHz, (Note 5) At f = 100KHz, (Note 6) R L = 10K R L = 100K COM(OFF) OUT (OFF) 3.0 3.0 3.0 pF CDS (ON) CPP 5.7 5.7 5.7 pF 0.5 0.6 0.25 pF DC ELECTRICAL CHARACTERISTICS T A = 25C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified Parameter Analog Signal Range On - Resistance Symbol VA RON 4211/4212/4213 (PC,SC) Min Typ Max 0.0 195 250 +5.0 280 365 4211/4212/4213 (DC) Min Typ Max 0.0 195 270 Change of On-Resistance from -V S to +VS Change of On-Resistance with Temperature Unit V Test Conditions +5.0 280 390 VA = 0V IA = 1mA -40C to +85C -55C to +125C RON RON/T 20 20 % 0.43 0.43 %/C RON Match Between Switches Off Com Leakage Current I COML 2 2 % 50 100 500 50 100 4000 pA pA pA pA pA pA pA pA pA VCOM = 1 to 4V,VOUT = 4 to 1V -40C to +85C -55C to +125C VOUT = 1 to 4V,VCOM = 4 to 1V Off Out Leakage Current I OUTL 50 100 500 50 100 4000 -40C to +85C -55C to +125C On Channel Leakage Current I D(ON) 50 100 500 50 100 4000 -40C to +85C -55C to +125C Logic "1" Input High Voltage Input Low Voltage Input High or Input Low Current Supply Current VIH VIL I IH I IL I SUPPLY 4.0 0.8 4.0 0.8 V Logic "0" 10 0.01 1 0.01 10 1 nA A Notes: 1. Voltage on any terminal must be less than (V+) + 0.3V and greater than (V-) - 0.3V, at all times including before power is applied and V+ =V- = 0.0V. Vsupply power supply needs to be sequenced on first on power turn-on and sequenced off last during power turn-off. 2. See Switching Time Test Circuit. Break-before-make time is not guaranteed. Turn on and turn off time may overlap. 3. Guaranteed by design. 4. See Charge Injection Test Circuit 5. See Off Isolation Test Circuit 6. See Crosstalk Test Circuit. 7. See switching time test circuit. ALD4211/ALD4212 ALD4213 Advanced Linear Devices 3 AC ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V, V- = GND = 0.0V unless otherwise specified Parameter Turn On Delay time Turn Off Delay time Break-Before-Make Symbol tON 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Min Typ Max Min Typ Max Min Typ Max 85 170 85 170 85 170 Unit ns Test Conditions (Note 7) tOFF tBD QINJ 15 46 90 46 90 46 90 ns (Note 7) Delay Time Charge Injection Off Isolation Crosstalk Total Harmonic Distortion Com/Out Off Capacitance Channel On Capacitance Pin to Pin Capacitance 40 0.2 75 90 1.0 15 40 0.2 75 90 0.05 0.01 1.0 15 40 0.2 75 90 0.05 0.01 1.0 ns pC dB dB % (Note 3) (Note 4) At f = 100KHz, (Note 5) At f = 100KHz, (Note 6) R L = 10K R L = 100K THD 0.05 0.01 COM(OFF) OUT (OFF) 3.0 5.7 3.0 5.7 3.0 5.7 pF pF CDS (ON) CPP 0.5 0.6 0.25 pF The ALD4211/ALD4212/ALD4213 precision due to these factors: feature very high 1. The analog switch has ultra low capacitive charge coupling so that the charge stored on a 200pF sampling capacitor is minimally affected. 2. With special charge balancing and charge cancellation circuitry designed on chip, the ALD4211/ALD4212/ ALD4213 achieves ultra low charge injection of typically only 0.2pC resulting in extremely low signal distortion to the external circuit. 3. The analog switch switching transistors have pA leakage currents minimizing the droop rate of the sampling circuit. 4. The internal switch timing allows for the analog switch to turn off internally without producing any residual transistor channel charge injection, which may affect external circuits. With a low loss polystyrene or polypropylene sampling capacitor, long data retention times are possible without significant signal loss. The ALD4211/ALD4212/ALD4213 CMOS analog switches, when used with industry standard pinout connection, have the input and output pins reversed with the signal source input connected to OUT pins and COM pins used as output pins. In this connection and when used with 1,000pF or greater value capacitors, or when connected to a DC current or resistive load, the switch would not be operating in an ultra low charge injection mode. Typical charge injection, in this case, would be 5pC as the pin to pin capacitive coupling effect would dominate. In this connection, all the other characteristics of the ALD4211/ALD4212/ALD4213 CMOS analog switches remain the same. ALD4211/ALD4212 ALD4213 Advanced Linear Devices 4 DC ELECTRICAL CHARACTERISTICS TA = 25C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC,SC) Parameter Analog Signal Range On - Resistance Symbol VA RON Min 0.0 500 620 Typ Max 3.0 700 880 4211/4212/4213 (DC) Min 0.0 500 680 Change of On-Resistance from -VS to +VS Change of On-Resistance with Temperature Typ Max 3.0 700 1000 Unit V Test Conditions VA = 0V IA = 1mA -40C to +85C -55C to +125C RON RON/T 43 43 % 0.27 0.27 %/C RON Match Between Switches Off Com Leakage Current I COML 2 2 % 50 100 500 50 100 4000 pA pA pA pA pA pA pA pA pA VCOM = 1 to 2V,VOUT = 2 to 1V -40C to +85C -55C to +125C VOUT = 1 to 2V,VCOM = 2 to 1V Off Out Leakage Current I OUTL 50 100 500 50 100 4000 -40C to +85C -55C to +125C Channel On Leakage Current I D(ON) 50 100 500 50 100 4000 -40C to +85C -55C to +125C Logic "1" Input High Voltage Input Low Voltage Input High or Input Low Current Supply Current VIH VIL I IH I IL I SUPPLY 2.4 0.8 2.4 0.8 V Logic "0" 10 0.01 1 0.01 10 1 nA A AC ELECTRICAL CHARACTERISTICS TA = 25C V+ = +3.0V, V- = GND = 0.0V unless otherwise specified 4211/4212/4213 (PC) 4211/4212/4213 (DC) 4211/4212/4213 (SC) Parameter Turn On Delay time Symbol tON tOFF tBD QINJ Min Typ 160 Max 300 Min Typ 160 Max 300 Min Typ 160 Max 300 Unit ns Test Conditions (Note 7) Turn Off Delay time Break-Before-Make Delay Time Charge Injection Off Isolation Crosstalk Total Harmonic Distortion Com/Out Off Capacitance Channel On Capacitance Pin to Pin Capacitance 78 20 82 1500 20 78 82 150 20 78 82 150 ns ns (Note 7) 0.2 75 90 0.5 0.2 75 90 0.05 0.01 0.5 0.2 75 90 0.05 0.01 0.5 pC (Note 3) (Note 4) dB dB At f = 100KHz, (Note 5) At f = 100KHz, (Note 6) THD 0.05 0.01 % R L = 10K R L = 100K COM(OFF) OUT (OFF) 3.0 5.7 3.0 5.7 3.0 5.7 pF pF CDS (ON) CPP 0.5 0.6 0.25 pF ALD4211/ALD4212 ALD4213 Advanced Linear Devices 5 TYPICAL PERFORMANCE CHARACTERISTICS POWER DISSIPATION AS A FUNCTION OF FREQUENCY 1.0 240 ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE POWER DISSIPATION (mW) ON - RESISTANCE () 0.8 0.6 0.4 0.2 0 0 VSUPPLY = 5V 200 160 VSUPPLY = 10V 125C 120 80 40 85C 25C -25C -55C 1 10 100 1000 10000 0 2 4 6 8 10 FREQUENCY (KHz) SIGNAL VOLTAGE (V) ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE 500 ON RESISTANCE AS A FUNCTION OF SIGNAL VOLTAGE 850 ON - RESISTANCE () ON - RESISTANCE () 400 300 VSUPPLY = 5V 700 550 400 250 100 VSUPPLY = 3V 125C 200 100 0 0 1 2 3 4 85C 25C - 25C - 55C 125C 85C 25C - 25C - 55C 0 0.6 1.2 1.8 2.4 3.0 5 SIGNAL VOLTAGE (V) SIGNAL VOLTAGE (V) SWITCH DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE 250 SWITCH DELAY TIME (ns) 200 150 100 50 TURN OFF DELAY TIME 0 3 4 5 6 7 8 9 10 TURN ON DELAY TIME 250 SWITCH DELAY TIME AS A FUNCTION OF SUPPLY VOLTAGE SWITCH DELAY TIME (ns) ALD 4211 ALD4213, SW2, 3 200 150 100 50 0 3 4 5 ALD4212 ALD4213 SW1, 4 TURN ON DELAY TIME TURN OFF DELAY TIME 6 7 8 9 10 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) ALD4211/ALD4212 ALD4213 Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE 2.0 SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE 100 SUPPLY CURRENT (A) SUPPLY CURRENT (mA) 1.6 1.2 0.8 0.4 0 0 VSUPPLY = 10V 80 60 40 20 0 VSUPPLY = 5V 2 4 6 8 10 0 1 2 3 4 5 INPUT VOLTAGE (V) INPUT VOLTAGE (V) SUPPLY CURRENT AS A FUNCTION OF INPUT VOLTAGE TOTAL HARMONIC DISTORTION (%) 10 100 10 1 0.1 0.01 TOTAL HARMONIC DISTORTION AS A FUNCTION OF FREQUENCY SUPPLY CURRENT (A) 8 6 4 2 0 0 VSUPPLY = 3V VSUPPLY = 5V VS = 0.355 VRMS RL = 10K RL = 100K 0.001 0.1 1.0 10 100 0.6 1.2 1.8 2.4 3.0 INPUT VOLTAGE (V) FREQUENCY (KHz) SWITCH DELAY TIME AS A FUNCTION OF TEMPERATURE 250 CHARGE INJECTION AS A FUNCTION OF SOURCE RESISTANCE 3.0 SWITCH DELAY TIME (ns) CHARGE INJECTION (PC) 200 150 100 50 0 -75 NC: Normally Closed NO: Normally Open VSUPPLY = 5V 2.5 2.0 1.5. 1.0 0.5 0 0 10 20 30 CL = 200pF 40 50 CL = 1000pF TURN ON DELAY TIME NC NO NO NC TURN OFF DELAY TIME -25 25 75 100 TEMPERATURE (C) SOURCE RESISTANCE () ALD4211/ALD4212 ALD4213 Advanced Linear Devices 7 TEST CIRCUITS CROSSTALK TEST CIRCUIT V+ V- SWITCHING TIME TEST CIRCUIT 4211.STTC.E V+ V- Vi = 1Vr ms 100kHz 50 COM1 COM2 V+ V- OUT1 OUT2 RL = 1K VO CL = 15pF V+ VS = 3V Logic Input 100kHz 4.5V 0V COM1 IN1 GND VOUT1 VO CL = 35pF GND CL = 15pF RL = 1K RL = 1K tr = tf 20ns CCRR = 20 log [ VO/Vi ] Logic Input VO 50% 50% OFF ISOLATION TEST CIRCUIT V+ V- 10% 90% Vi = 1Vrms 100kHz 50 COM1 IN1 V+ V- OUT1 RL = 1K VO CL = 15pF ton / toff toff / ton GND QIRR = 20 log (VO/Vi) CHARGE INJECTION TEST CIRCUIT 4211.CITC.EP V+ V- V+ COM1 IN1 GND 4.5V 0.5V Logic Input 100kHz VOUT1 VO CL = 200pF TOTAL HARMONIC DISTORTION TEST CIRCUIT 4211.THDTC.EPS.W V+ V- Vi = 1Vpp 100kHz 50 COM1 IN1 V+ V- OUT1 RL = 1K VO Logic Input VO Q = CLVO GND CL = 15pF VO ALD4211/ALD4212 ALD4213 Advanced Linear Devices 8 |
Price & Availability of ALD421105
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |